RB420D(2011) 데이터 시트보기 (PDF) - ROHM Semiconductor

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RB420D
(Rev.:2011)

Shottky barrier diode

ROHM Semiconductor 

Data Sheet

Shottky barrier diode

RB420D

Applications

Low current rectification

Dimensions (Unit : mm)

Land size figure (Unit : mm)

1.9

Features

1) Small mold type. (SMD3)

2) Low IR

3) High reliability.

Construction

Silicon epitaxial planar

2.9± 0.2

各リードとも

0.4 ＋0.1 Each同le寸a法d has same dimension

　－0.05

(3)

＋0.1

0.15－0.06

0.95

(2)

(1)

0.95

0.95

1.9± 0.2

0～ 0.1

0 . 8± 0 . 1

11..11±0000....2102 1

0.8MIN.

SMD3

Structure

ROHM : SMD3

JEDEC :S0T-346

JEITA : SC-59

week code

Taping specifications(Unit : mm)

4.0±0.1

2.0±0.05

φ1.5±0.1

　　　　　 0

0.3±0.1

3.2±0.1

4.0±0.1

Absolute maximum ratings(Ta=25°C)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward voltage (*1)

Forward current surge peak (60Hz・1cyc) (*1)

Junction temperature

Storage temperature

(*1) Rating of per diode

Symbol

VRM

VR

Io

IFSM

Tj

Tstg

Limits

40

40

100

1

125

40 to 125

φ1.05MIN

Unit

V

V

mA

A

°C

°C

1.35±0.1

Electrical characteristics(Ta=25°C)

Parameter

Forward voltage

Reverse current

Capacitance between terminals

Symbol Min. Typ. Max.

VF1

-

- 0.45

IR1

-

-

1

Ct1

-

6

-

Unit

Conditions

V

IF=10mA

μA

VR=10V

pF

VR=10V , f=1MHz

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© 2011 ROHM Co., Ltd. All rights reserved.

1/3

2011.03 - Rev.D

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