RB420D(2011) 데이터 시트보기 (PDF) - ROHM Semiconductor
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RB420D Datasheet PDF : 4 Pages
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RB420D
Data Sheet
100
100
Ta=75℃
10
10
Ta=25℃
Ta=125℃
1
1
Ta=-25℃
0.1
0.1
0.01
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.01
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.001
0
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
400
500
30
Ta=25T℃a=25℃
Ta=25℃
IF=1A
390
IF=10mn=A30pcs
n=10pcs
400
VR=10V
n=30pcs
25
20
380
300
15
370
200
10
Ta=25℃
f=1MHz
VR=10V
n=10pcs
360
AAVVEE:4:3257.20m.V9mV
σ:1.6771mV
350
100
AVE:98.96nA
0
5
AVE:5.81pF
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
15
Ifsm
1cyc
Ifsm
15
8.3ms
10
8.3ms 8.3ms
1cyc
10
5
AVE:5.5A
0
IFSM DISRESION MAP
5
0
0.1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
10
1ms time
300us
1
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.1
0.08
D=1/2
0.06
Sin(θ＝180)
DC
0.04
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
15
Ifsm
t
10
5
0
0.1
0.003
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.002
0.001
DC
Sin(θ＝180)
D=1/2
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
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2011.03 - Rev.D
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