RB501V-40 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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RB501V-40

Schottky Barrier Diode

Galaxy Semi-Conductor 

Production specification

Schottky Barrier Diode

FEATURES

 High current rectifier schottky diode

 Low voltage; Low inductance

 For power supply

Pb

Lead-free

RB501V-40

APPLICATIONS

 High frequency rectification

ORDERING INFORMATION

Type No.

Marking

RB501V-40

4

SOD-323

Package Code

SOD-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Peak reverse voltage

VRM

45

V

DC reverse voltage

VR

40

V

Mean rectifying current

IO

0.1

A

Peak forward surge current

IFSM

1

A

Junction temperature

Tj

125

℃

Storage temperature

Tstg

-40 to+125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Forward voltage

Reverse current

Capacitance between terminals

Symbol Min.

VF

IR

CT

Typ.

6

Max.

0.55

0.34

30

Unit

V

μA

pF

Conditions

IF=100mA

IF=10mA

VR=10v

VR=10V,f=1MHz

B021

Rev.A

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