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RB501V-40(2008) 데이터 시트보기 (PDF) - Tak Cheong Electronics (Holdings) Co.,Ltd

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RB501V-40
(Rev.:2008)
TAK_CHEONG
Tak Cheong Electronics (Holdings) Co.,Ltd TAK_CHEONG
RB501V-40 Datasheet PDF : 2 Pages
1 2
®
TAK CHEONG
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
Schottky Barrier Diode
SEMICONDUCTOR
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
200
mW
TSTG
Storage Temperature Range
-65 to +125
°C
TJ
Operating Junction Temperature
+125
°C
VRM
Repetitive Peak Reverse Voltage
40
V
VR
Maximum DC Blocking Voltage
40
V
IF(AV)
Average Forward Rectified Current
100
mA
IFSM
Peak Forward Surge Current
(8.3mS Single Half-wave)
1
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ Low Forward Voltage Drop
ƒ Flat Lead SOD-323 Small Outline Plastic Package
ƒ Surface Device Type Mounting
ƒ RoHS Compliant
ƒ Green EMC
ƒ Matte Tin(Sn) Lead Finish
ƒ Band Indicates Cathode
DEVICE MARKING CODE:
Device Type
RB501V-40
Device Marking
B4
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
BV
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TCBAT42WS,
IR=500µA
VR=40V
IF=10mA
IF=100mA
Limits
Min Max
42
100
0.340
0.550
Unit
Volts
µA
Volts
May 2008, Revision D
Page 1

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