F1S60P03 데이터 시트보기 (PDF) - Fairchild Semiconductor
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F1S60P03 Datasheet PDF : 8 Pages
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RFG60P03, RFP60P03, RF1S60P03SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFG60P03, RFP60P03, RFS60P03SM
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage, (Rgs = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Maximum Power Dissipation
Derate Above 25oC . . . . .
(Figure
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PD
..
-30
-30
±20
60
Refer to Peak Current Curve
Figure 6
176
1.17
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t ON
t d(ON)
tr
t d(OFF)
tf
t OFF
Q g(TOT)
Q g(-10)
Q g(TH)
C ISS
C OSS
C RSS
RθJC
R θ JA
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = 60A, VGS = 10V
VDD = 15V, ID ≈ 60A, RL = 0.25Ω,
VGS = -10V, RG = 2.5Ω,
(Figure 13)
VGS = 0 to -20V
VGS = 0 to -10V
VGS = 0 to -2V
VDD = -24V, ID ≈ 60A,
RL = 0.4Ω
Ig(REF) = -3mA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
(Figure 3)
TO-220AB, TO- 263AB
TO-247
MIN TYP MAX UNITS
-30
-
-
V
-2
-
-4
V
-
-
-1
µA
-
-
-50
µA
-
-
±100 nA
-
-
0.027 Ω
-
-
140
ns
-
20
-
ns
-
75
-
ns
-
35
-
ns
-
40
-
ns
-
-
115
ns
-
190 230 nC
-
100 120 nC
-
7.5
9
nC
-
3000
-
pF
-
1500
-
pF
-
525
-
pF
-
-
0.85 oC/W
-
-
62 oC/W
-
-
30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage (Note 2)
V SD
ISD = -60A
-
-
-1.75
Diode Reverse Recovery Time
t rr
ISD = -60A, dISD/dt = 100A/µs
-
-
200
NOTE:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
UNITS
V
ns
©2002 Fairchild Semiconductor Corporation
RFG60P03, RFP60P03, RF1S60P03SM Rev. B
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