RM100C1A-12F 데이터 시트보기 (PDF) - Mitsumi

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RM100C1A-12F

FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE

Mitsumi 

MITSUBISHI FAST RECOVERY DIODE MODULES

RM100CA/C1A-XXF

HIGH SPEED SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C)

Symbol

Parameter

Voltage class

12

16*

20*

VRRM

Repetitive peak reverse voltage

600

VDRM

Non-repetitive peak reverse voltage

720

800

1000

960

1100

VR (DC)

Reverse DC voltage

480

640

800

* Order made

Symbol

Parameter

Conditions

IDC

IFSM

I2t

DC output current

Surge (non-repetitive) forward current

I2t for fusing

Resistive load, TC=75°C

One half cycle at 60Hz, peak value

Value for one cycle of surge current

Tj

Junction temperature

Tstg

Storage temperature

Viso

Isolation voltage

Charged part to case

—

Mounting torque

Main terminal screw M4

Mounting screw M5

—

Weight

Typical value

24

1200

1350

960

Ratings

100

2000

16.7 × 103

– 40~150

– 40~125

2500

0.98~1.47

10~15

1.47~1.96

15~20

90

Unit

V

V

V

Unit

A

A

A2s

°C

°C

V

N·m

kg·cm

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

IRRM

Repetitive reverse current

VFM

Forward voltage

trr

Reverse recovery time

Qrr

Reverse recovery charge

Rth (j-c)

Thermal resistance

Rth (c-f)

Contact thermal resistance

*1 12 class: VR=300V 20, 24 class: VR=600V

Tj=150°C, VRRM applied

Tj=25°C, IFM=100A, instantaneous meas.

IFM=100A, di/dt=–200A/µs, VR=300/600V*1, Tj=150°C

Junction to case

Case to fin, conductive grease applied

Min.

—

—

—

—

—

—

Limits

Typ.

—

—

—

—

—

—

Max.

20

1.5

0.8

60

0.5

0.3

Unit

mA

V

µs

µC

°C/ W

°C/ W

Feb.1999

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