RMB2S(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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상세내역
제조사
RMB2S
(Rev.:2008)
(Rev.:2008)
Vishay Semiconductors
RMB2S Datasheet PDF : 4 Pages
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RMB2S & RMB4S
Vishay General Semiconductor
10
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
30
TJ = 25 °C
25
f = 1.0 MHz
Vsig = 50 mVp-p
20
15
10
5
0
0.1
1
10
100
1000
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.029 (0.74)
0.017 (0.43)
TO-269AA (MBS)
Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)
0.161 (4.10)
0.144 (3.65)
0.106 (2.70)
0.090 (2.30)
0.114 (2.90)
0.094 (2.40)
0.272 (6.90)
0.252 (6.40)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0 to 8°
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.030 MIN.
(0.76 MIN.)
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.272 MAX.
(6.91 MAX.)
0.105 (2.67)
0.095 (2.41)
Document Number: 88705 For technical questions within your region, please contact one of the following:
Revision: 01-Feb-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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