RMPA0913C-58 데이터 시트보기 (PDF) - Unspecified

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RMPA0913C-58

3.5V AMPS/CDMA Power Amplifier

Unspecified 

R aytheon Commercial E lectronics

RMPA0913C-58

3.5V AMPS/CDMA Power Amplifier

Table 1: Further Important Application Information

Pin#

Function

Application Notes

1

RF OUT AND VD2

An optimal output match for dual mode applications is set

by connecting capacitors C8 and C9 to the package pin

using approximately 0.233 inches of a 50 ohm

transmission line. These capacitors should be located

adjacent to each other and separated by 0.010 inches.

Lower efficiency will result if a single capacitor of

equivalent value were substituted. Fine adjust the

capacitors location to obtain a uniform saturated output

power response versus frequency using a single tone RF

input. Saturated output power is typically measured at

+7dBm input power and should be 32.3 to 32.5dBm with a

3.5 volt supply. This condition will yield typically 50dBc

ACPR1 and 60dBc ACPR2 at 28.5dBm output power at

3.5 volt supply using a CDMA waveform. If a greater

than 50 ohm impedance transmission line is used to

conserve space, transition the line to 50 ohms slightly prior

to the optimum tuning point to avoid undesirable effects

from the otherwise residual inductance following the tuning

elements. Once the optimum tuning point has been

established this remains fixed for all other amplifiers. For

the dc bias injection circuit choose an inductor with a

maximum series resistance rating of less than 0.15 ohms

for best efficiency and overall performance versus supply

voltage. The two 1.5uF tantalum bypass capacitors

chosen for this circuit are low ESR type capacitors with a

maximum rating of 1.5 ohms. The capacitor ESR is critical

for achieving the best ACPR possible from the amplifier.

Other capacitors may be substituted, although larger

values may be necessary to achieve equivalent

performance. These components should be placed at the

tie point for VD1 and VD2 and as close to the amplifier as

possible. Finally, connect pins 1-3 using one solid metal

pad as opposed to three individual pads for each pin.

2

RF OUT AND VD2

Same as pin 1.

3

RF OUT AND VD2

Same as pin 1.

4

G2 AC GND

Place component C12 < 0.080 inches from the package

pin.

5

GND

Connect pin immediately to the package base solder pad.

Raytheon reserves the right to update or change specifications without notice.

Tel: 978-684-8663

FAX: 978-684-5480

www.raytheon.com/micro

Revised March 30,2000

Page 7

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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