S8050 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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S8050

TRANSISTOR(NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

TRANSISTOR(NPN)

FEATURES

z Complimentary to S8550

z Collector Current: IC=0.5A

MARKING: J3Y

S8 050

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

PC

Collector Dissipation

Tj

Junction Temperature

Tstg

Storage Temperature

Value

40

25

5

0.5

0.3

150

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Units

V

V

V

A

W

℃

℃

Parameter

Symbol

Test conditions

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA, IE=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V(BR)CEO

V(BR)EBO

IC=1mA, IB=0

IE=100μA, IC=0

Collector cut-off current

ICBO

VCB=40 V , IE=0

Collector cut-off current

ICEO

VCB=20V , IE=0

Emitter cut-off current

IEBO

VEB= 5V , IC=0

DC current gain

HFE(1)

HFE(2)

VCE=1V, IC= 50mA

VCE=1V, IC= 500mA

Collector-emitter saturation voltage

VCE(sat) IC=500 mA, IB= 50mA

Base-emitter saturation voltage

Transition frequency

CLASSIFICATION OF hFE(1)

Rank

Range

VBE(sat)

fT

IC=500 mA, IB= 50mA

VCE=6V, IC= 20mA

f=30MHz

L

120-200

MIN

40

25

5

120

50

150

TYP MAX UNIT

V

V

V

0.1 μA

0.1 μA

0.1 μA

350

0.6

V

1.2

V

MHz

H

200-350

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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