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SE1030W 데이터 시트보기 (PDF) - SiGe Semiconductor, Inc.

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SE1030W
SIGE
SiGe Semiconductor, Inc. SIGE
SE1030W Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
The diagram below shows the bondpad configuration of the SE1030W Transimpedance Amplifier. Note that the
diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. There are
three VCC and three VEE1 pads for ease of wire bonding; the VCC and VEE1 pads respectively are connected on-
chip and only one pad of each type is required to be bonded out.
Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.
1004.0
123.0 307.0 134.0
Top
View
230.0
134.0 199.0
1250.0
Side View
All Dimensions in Microns (µm)
43-DST-01 § Rev 1.5 § May 24/02
7 of 9

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