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SE1050W 데이터 시트보기 (PDF) - SiGe Semiconductor, Inc.

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SE1050W
SIGE
SiGe Semiconductor, Inc. SIGE
SE1050W Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SE1050W
LightCharger10 Gb/s Transimpedance Amplifier
Final
As a guide to the effect of bondwire length on inductance, the table below gives some examples of observed
inductance per millimeter for popular gold bondwire diameters. The effect of input bondwire inductance on
Bandwidth, Input Referred Noise and Gain Peak, is shown in the graphs below.
Bondwire diameter (µm)
25
30
32
Inductance per mm (nH)
0.81
0.77
0.76
Bandwidth vs Input Bondwire Inductance
Differential Mode of Operation
11
10
Cpin = 0.2 pF
9
8
Cpin = 0.25 pF
7
0.5
0.7
0.9
1.1
Input Inductance (nH)
1.3
1.5
45-DST-01 § Rev 1.5 § May 24/02
9 of 11

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