SFH6315T(2003) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SFH6315T Datasheet PDF : 8 Pages
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SFH6315T/ SFH6316T/ SFH6343T
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
3.0
V
DC forward current
IF
25
mA
Surge forward current
tp ≤ 1.0 µs, 300 pulses/s
IFSM
1.0
A
Power dissipation
Tamb ≤ 70 °C
Pdiss
45
mW
Output
Parameter
Supply voltage
Output voltage
Output current
Power dissipation
Test condition
Tamb ≤ 70 °C
Symbol
Value
Unit
VS
- 0.5 to 30
V
VO
- 0.5 to 25
V
IO
8.0
mA
Pdiss
100
mW
Coupler
Parameter
Isolation test voltage between
emitter and detector (refer to
climate DIN 40046, part 2,
Nov.74)
Pollution degree (DIN VDE
0110)
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Test condition
VIO = 500 V, Tamb = 25 °C, RISOL
(Note 2)
VIO = 500 V, Tamb = 100 °C,
RISOL (Note 2)
Ambient temperature range
Junction temperature
Soldering temperature
t = 10 s max., Dip soldering:
distance to seating plane
≥1.5 mm
Symbol
VISO
RIO
RIO
Tstg
Tamb
Tj
Value
3000
2
≥ 4.0
≥ 4.0
175
≥ 1012
≥ 1011
-55 to +150
-55 to +100
100
260
Unit
VRMS
mm
mm
Ω
Ω
°C
°C
°C
°C
www.vishay.com
2
Document Number 83677
Rev. 1.3, 20-Nov-03
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