SI3456BDV(2004) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI3456BDV Datasheet PDF : 5 Pages
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N-Channel 30-V (D-S) MOSFET
Si3456BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.035 @ VGS = 10 V
0.052 @ VGS = 4.5 V
ID (A)
6.0
4.9
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3456BDV-T1—E3
Marking Code:
6Bxxx
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
6.0
4.5
4.8
3.6
"30
1.7
0.9
2.0
1.1
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
Symbol
RthJA
RthJF
Typical
55
92
28
Maximum
62.5
110
40
Unit
_C/W
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