SI3456BDV-T1-E3(2004) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SI3456BDV-T1-E3
(Rev.:2004)

N-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

Si3456BDV

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Currenta

Drain-Source On-State Resistancea

Forward Transconductancea

Diode Forward Voltagea

Dynamicb

VGS(th)

IGSS

IDSS

ID(on)

rDS(on)

gfs

VSD

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "20 V

VDS = 30 V, VGS = 0 V

VDS = 30 V, VGS = 0 V, TJ = 55_C

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 6 A

VGS = 4.5 V, ID = 4.9 A

VDS = 15 V, ID = 6 A

IS = 1.7 A, VGS = 0 V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Qg

Qgs

Qgd

Rg

td(on)

tr

td(off)

tf

trr

Notes

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

VDS = 15 V, VGS = 10 V, ID = 6 A

f = 1 MHz

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

IF = 1.7 A, di/dt = 100 A/ms

Min Typ Max Unit

1.0

3.0

V

"100

nA

1

mA

5

30

A

0.028

0.035

W

0.041

0.052

12

S

0.8

1.2

V

8.6

13

1.8

nC

1.5

1.4

2.8

4.8

W

10

15

15

25

25

40

ns

10

15

20

40

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

40

35

30

25

20

15

10

5

0

0

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2

Output Characteristics

VGS = 10 thru 6 V

5V

4V

3V

1

2

3

4

5

VDS − Drain-to-Source Voltage (V)

Transfer Characteristics

40

35

TC = −55_C

25_C

30

25

125_C

20

15

10

5

0

0

1

2

3

4

5

6

VGS − Gate-to-Source Voltage (V)

Document Number: 72544

S-404024—Rev. C, 15-Mar-04

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