SI3456BDV(2004) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI3456BDV Datasheet PDF : 5 Pages
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Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
Capacitance
800
0.08
0.06
0.04
VGS = 4.5 V
0.02
VGS = 10 V
700
600
500
400
300
200
100
Crss
Ciss
Coss
0.00
0
5 10 15 20 25 30 35 40
0
0
5
10
15
20
25
30
ID − Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 6 A
8
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 6 A
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
TJ = 150_C
10
TJ = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
ID = 6 A
0.04
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD − Source-to-Drain Voltage (V)
Document Number: 72544
S-404024—Rev. C, 15-Mar-04
0.00
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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