SI4953ADY 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI4953ADY Datasheet PDF : 5 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
1500
Si4953ADY
Vishay Siliconix
0.15
0.10
VGS = 4.5 V
0.05
VGS = 10 V
0
0
6
12
18
24
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 15 V
ID = 4.9 A
8
1200
Ciss
900
600
Coss
300
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
ID = 4.9 A
1.4
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
Gate Charge
30
TJ = 150 °C
10
TJ = 25 °C
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.40
0.35
ID = 4.9 A
0.30
0.25
0.20
0.15
0.10
0.05
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71091
S09-0870-Rev. C, 18-May-09
www.vishay.com
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