K04N60(2007) 데이터 시트보기 (PDF) - Infineon Technologies

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K04N60
(Rev.:2007)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP04N60

500ns

400ns

300ns

200ns

100ns

IF = 8A

IF = 2A

IF = 4A

0ns

40A/µs 120A/µs 200A/µs 280A/µs 360A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

8A

6A

IF = 8A

4A

IF = 4A

IF = 2A

2A

0A

40A/µs 120A/µs 200A/µs 280A/µs 360A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

560nC

480nC

400nC

IF = 8A

320nC

240nC

160nC

IF = 4A

IF = 2A

80nC

0nC

40A/µs 120A/µs 200A/µs 280A/µs 360A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

400A/µs

320A/µs

240A/µs

160A/µs

80A/µs

0A/µs

40A/µs

120A/µs 200A/µs 280A/µs 360A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

9

Rev. 2.2 Sep 07

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