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SMBJ188A(2009) 데이터 시트보기 (PDF) - STMicroelectronics

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SMBJ188A
(Rev.:2009)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMBJ188A Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
SMBJ
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
PPP Peak pulse power dissipation (1)
Tj initial = Tamb
600
W
Tstg Storage temperature range
-65 to +150
°C
Tj
Operating junction temperature range
-55 to +150
°C
TL
Maximum lead temperature for soldering during 10 s.
260
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistances
Symbol
Parameter
Rth(j-l)
Rth(j-a)
Junction to leads
Junction to ambient on recommended pad layout
Value
20
100
Unit
°C/W
°C/W
Figure 1. Electrical characteristics - definitions
I
I
Symbol Parameter
VRM Stand-off voltage
Unidirectional IF
IPP
VBR Breakdown voltage
VCL Clamping voltage
IRM
Leakage current @ VRM
VCLVBR VRM
VF
V
VCLVBR VRM
IR
IRM
V
IPP
Peak pulse current
IRM
αT
Voltage temperature coefficient
IR
IRM VRMVBR VCL
IR
VF
Forward voltage drop
RD
Dynamic resistance
IPP
Bidirectional
IPP
Figure 2.
Pulse definition for electrical characteristics
% Ipp
100
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
t
tr
tp
2/10
Doc ID 5616 Rev 8

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