SPU31N05 데이터 시트보기 (PDF) - Siemens AG

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SPU31N05

SIPMOS ® Power Transistor

Siemens AG 

SPD31N05

SPU31N05

Maximum Ratings

Parameter

Operating temperature

Storage temperature

Thermal resistance, junction - case

Thermal resistance, junction - ambient (PCB mount)**

Thermal resistance, junction - ambient

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJC

RthJA

RthJA

Values

Unit

-55 ... + 175 °C

-55 ... + 175

≤2

K/W

≤ 50

≤ 100

55 / 175 / 56

** when mounted on 1 " square PCB ( FR4 );for recommended footprint

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 50 µA

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = -40 °C

VDS = 50 V, VGS = 0 V, Tj = 25 °C

VDS = 50 V, VGS = 0 V, Tj = 150 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10 V, ID = 22 A

V(BR)DSS

55

VGS(th)

2.1

IDSS

-

-

-

IGSS

-

RDS(on)

-

V

-

-

3

-

0.1

-

10

0.03

4

µA

0.1

1

100

nA

100

Ω

0.04

Semiconductor Group

2

30/Jan/1998

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