SS8550 데이터 시트보기 (PDF) - Daya Electric Group Co., Ltd.

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SS8550

TO-92 Plastic-Encapsulate PNP Transistors

Daya Electric Group Co., Ltd. 

TO-92 Plastic-Encapsulate Transistors

SS8550 TRANSISTOR (PNP)

TO-92

FEATURES

Power dissipation

PC : 1 W (TA=25℃)

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.5

A

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

1. EMITTER

2. BASE

3. COLLECTOR

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-100uA, IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO IC=-0.1mA, IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-0.1 μA

Emitter cut-off current

ICEO

VCE=-20V, IE=0

-0.1 μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1 uA

DC current gain

hFE(1)

hFE(2)

VCE=-1V, IC=-100mA

VCE=-1V, IC=-800mA

85

400

40

Collector-emitter saturation voltage

VCE(sat) IC=-800mA, IB=-80mA

-0.5

V

Base-emitter saturation voltage

VBE(sat) IC=-800mA, IB=-80mA

-1.2

V

Base-emitter voltage

VBE(on) VCE=-1V, IC=-10mA

-1

V

Out capacitance

Cob VCB=-10V, IE=0mA,f=1MHZ

20

pF

Transition frequency

fT

VCE=-10V, IC=-50mA,f=-30MHZ

100

MHz

CLASSIFICATION OF hFE(2)

Rank

Range

B

85-160

C

120-200

D

160-300

D3

300-400

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