STPS1045BPBF 데이터 시트보기 (PDF) - Vishay Semiconductors
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STPS1045BPBF Datasheet PDF : 6 Pages
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STPS1045BPbF
Vishay High Power Products Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
10 A
20 A
TJ = 25 °C
10 A
20 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.63
0.84
0.57
0.72
0.2
15
760
5.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
RthJC
RthJA
DC operation
See fig. 4
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES UNITS
- 40 to 175 °C
3.0
°C/W
50
0.3
g
0.01
oz.
STPS1045B
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94323
Revision: 23-Apr-08
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