T15N1M16A 데이터 시트보기 (PDF) - Taiwan Memory Technology

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T15N1M16A

64K X 16 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

T15N1M16A

OPERATING CHARACTERISTICS

(Vcc = +2.4 to 3.6V , VSS = 0V, Ta = 0°C to +70°C / -40°C to +85 °C)

-55

PARAMETER SYM. TEST CONDITIONS

Min Max

-70

Min Max

Input Leakage

Current

ILI

Vcc = Max,

VIN = VSS to Vcc

-1

1

-1

1

CE= VIH

Output Leakage ILO or OE = VIH

Current

or WE = VIL

-1

1

-1

1

VIO = VSS to Vcc

CE = VIL,

VIN = VIH or VIL,

Operating Power ICC IOUT=0mA

-

30

-

25

Supply Current

Cycle time=min,

100% duty

Standby Power

Supply Current

(TTL Level)

ISB

CE = VIH or

LB = UB = VIH

other input= VIL or

VIH

-

0.3

-

0.3

CE ≥ Vcc-0.2V or

Standby Power

Supply Current

(CMOS Level)

Output Low

Voltage

Output High

Voltage

ISB1

VOL

VOH

LB = UB ≥

Vcc-0.2V,

VIN ≤ 0.2V or

VIN ≥ Vcc-0.2V

IOL = 2.1mA

IOH = -1 mA

-

10

-

10

-

0.4

2.2

-

-

0.4

2.2

-

-100

UNIT

Min Min

-1

1 uA

-1

1 uA

-

20 mA

-

0.3 mA

-

10 uA

-

0.4 V

2.2

-

V

TM Technology Inc. reserves the right

P. 4

to change products or specifications without notice.

Publication Date: JUL . 2002

Revision: A

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