TC2320TG-G(2008) 데이터 시트보기 (PDF) - Supertex Inc
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TC2320TG-G Datasheet PDF : 4 Pages
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TC2320
P-Channel Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
-200
-
-
V
VGS = 0V, ID = -2.0mA
VGS(th) Gate threshold voltage
-1.0
-
-2.4
V
VGS = VDS, ID = -1.0mA
ΔVGS(th) Change in VGS(th) with temperature
-
-
4.5
mV/OC VGS = VDS, ID = -1.0mA
IGSS Gate body leakage
-
-
-100
nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
-
-
-10
µA VGS = 0V, VDS = Max rating
-
-
-1.0
mA
VGS = 0V, TA = 125OC,
VDS = 0.8 Max Rating
ID(ON) On-state drain current
-0.25 -0.7
-
-0.75 -2.1
-
A
VGS = -4.5V, VDS = -25V
VGS = -10V, VDS = -25V
RDS(ON)
Static drain-to-source on-state
resistance
-
10
15
-
8.0
12
Ω
VGS = -4.5V, ID = -100mA
VGS = -10V, ID = -200mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.7
%/OC VGS = -10V, ID =-200mA
GFS Forward transconductance
100 250
-
mmho VDS = -25V, ID = -200mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
-
75
125
VGS = 0V,
-
20
85
pF VDS = -25V,
-
10
35
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-on delay time
Fall time
-
-
10
-
-
15
VDD = -25V,
-
-
20
ns ID = -0.75A,
RGEN = 25Ω
-
-
15
VSD Diode forward voltage drop
-
-
-1.8
V
VGS = 0V, ISD = -0.5A
trr
Reverse recovery time
-
300
-
ns
VGS = 0V, ISD = -0.5A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
P-Channel Switching Waveforms and Test Circuit
0V
INPUT
10%
-10V
t(ON)
90%
t(OFF)
PULSE
GENERATOR
RGEN
td(ON)
tr
td(OFF)
tF
0V
OUTPUT
VDD
10%
90%
90%
10%
INPUT
D.U.T.
Output
RL
VDD
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
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