C2320 데이터 시트보기 (PDF) - Supertex Inc

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C2320

N- and P-Channel Enhancement-Mode Dual MOSFET

Supertex Inc 

TC2320

N- and P-Channel Enhancement-Mode Dual MOSFET

Features

► Low threshold

► Low on resistance

► Low input capacitance

► Fast switching speeds

► Freedom from secondary breakdown

► Low input and output leakage

► Independent, electrically isolated N- and P-

channels

Applications

► Medical ultrasound transmitters

► High voltage pulsers

► Amplifiers

► Buffers

► Piezoelectric transducer drivers

► General purpose line drivers

► Logic level interface

General Description

The Supertex TC2320TG consists of a high voltage, low

threshold N- and P-channel MOSFET in an SO-8 package.

These low threshold enhancement-mode (normally-off)

transistors utilize an advanced vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces devices with the

power handling capabilities of bipolar transistors and

with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Ordering Information

Device

Package Options

8-Lead SOIC (Narrow Body)

TC2320

TC2320TG-G

-G indicates package is RoHS compliant (‘Green’)

BVDSS/BVDGS

(V)

N-Channel P-Channel

200

-200

RDS(ON)

(max)

(Ω)

N-Channel P-Channel

7.0

12

Pin Configuration

Absolute Maximum Ratings

Parameter

Value

Drain to source voltage

Drain to gate voltage

Gate to source voltage

BVDSS

BV

DGS

±20V

Operating and storage temperature -55°C to +150°C

Soldering temperature*

+300°C

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

DRAIN_P

DRAIN_P

DRAIN_N

DRAIN_N

GATE_P

SOURCE_P

GATE_N

SOURCE_N

8-Lead SOIC (TG)

Product Marking

YYWW

C2320

LLLL

YY = Year Sealed

WW = Week Sealed

L = Lot Number

= “Green” Packaging

8-Lead SOIC (TG)

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