TIP150 데이터 시트보기 (PDF) - SavantIC Semiconductor
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TIP150 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP150/151/152
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
TIP150
TIP151
TIP152
IC=10mA, IB=0
V(BR)CBO
Collector-base
breakdown voltage
TIP150
TIP151
TIP152
IC=1mA, IE=0
VCE(sat)-1 Collector-emitter saturation voltage IC=1A ,IB=10mA
VCE(sat)-2 Collector-emitter saturation voltage IC=2A ,IB=100mA
VCE(sat)-3 Collector-emitter saturation voltage IC=5A ,IB=250mA
VBE(sat)-1 Base-emitter saturation voltage
IC=2A ,IB=100mA
VBE (sat)-2 Base-emitter saturation voltage
IC=5A ,IB=250mA
TIP150 VCE=300V, IB=0
ICEO
Collector cut-off current TIP151 VCE=350V, IB=0
TIP152 VCE=400V, IB=0
IEBO
hFE-1
hFE-2
hFE-3
Emitter cut-off current
DC current gain
DC current gain
DC current gain
VEB=8V; IC=0
IC=2.5A ; VCE=5V
IC=5A ; VCE=5V
IC=7A ; VCE=5V
VF
Diode forward voltage
IF=7A
COB
Output capacitance
Switching times
IE=0 ; VCB=10V;f=1MHz
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=250V; IC=5A
IB1=-IB2=250mA
tp=20µs;Duty CycleC2.0%
MIN TYP. MAX UNIT
300
350
V
400
300
350
V
400
1.5
V
1.5
V
2.0
V
2.2
V
2.3
V
250
µA
15
mA
150
50
15
3.5
V
150
pF
0.03
µs
0.18
µs
3.5
µs
1.6
µs
2
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