K50A04K3 데이터 시트보기 (PDF) - NXP Semiconductors.

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K50A04K3

MOSFETs Silicon N-channel MOS (U-MOSIV)

NXP Semiconductors. 

5. Thermal Characteristics

TK50A04K3

Characteristics

Symbol

Max

Unit

Channel-to-case thermal resistance

Rth(ch-c)

3.57

/W

Channel-to-ambient thermal resistance

Rth(ch-a)

62.5

Note 1: Ensure that the channel temperature does not exceed 175.

Note 2: VDD = 25 V, Tch = 25 (initial), L = 124 µH, RG = 1 Ω, IAR = 50 A

Note 3: The definitions of the absolute maximum channel and storage temperatures are based on AEC-Q101.

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2

2013-02-19

Rev.1.0

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