TK50P03M1 데이터 시트보기 (PDF) - Unspecified

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TK50P03M1

MOSFETs Silicon N-Channel MOS (U-MOSVI-H)

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TK50P03M1

MOSFETs Silicon N-Channel MOS (U-MOS-H)

1. Applications

• DC-DC Converters

• Desktop PCs

2. Features

(1) High-speed switching

(2) Low gate charge: QSW = 8.2 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Gate-source voltage

VGSS

±20

Drain current (DC)

(Note 1)

ID

50

A

Drain current (pulsed)

(Note 1)

IDP

150

Power dissipation

(Tc = 25)

PD

47

W

Single-pulse avalanche energy

(Note 2)

EAS

65

mJ

Avalanche current

IAR

50

A

Channel temperature

Tch

150



Storage temperature

Tstg

-55 to 150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

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