TM15T3A-H 데이터 시트보기 (PDF) - Mitsumi
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TM15T3A-H Datasheet PDF : 4 Pages
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MITSUBISHI THYRISTOR MODULES
TM15T3A-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
Symbol
IO
ITSM, IFSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
Parameter
DC output current
Surge (non-repetitive) current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Conditions
3-phase fullwave rectified, TC=104°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=0.5A, Tj=125°C
Charged part to case
—
Mounting torque
Main terminal screw M5
Mounting screw M5
—
Weight
Typical value
H
800
960
640
800
960
640
Ratings
30
300
3.8 × 102
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.47~1..96
15~20
310
Unit
V
V
V
V
V
V
Unit
A
A
A2s
A /µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
IDRM
VTM, VFM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current Tj=125°C, VRRM applied
Repetitive peak of off-state
Tj=125°C, VDRM applied
current
Tj=125°C, ITM=IFM=75A, instantaneous meas.
Forward voltage
Tj=125°C, VD=2/3VDRM
Critical rate of rise of off-state voltage Tj=25°C, VD=6V, RL=2Ω
Gate trigger voltage
Tj=125°C, VD=1/2VDRM
Gate non-trigger voltage
Tj=25°C, VD=6V, RL=2Ω
Gate trigger current
Junction to case (per 1/6 module)
Thermal resistance
Case to fin, Conductive grease applied (per 1/6 module)
—
Contact thermal resistance
Insulation resistance
Measured with a 500V megohmmeter between main terminal
and case
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Min.
—
—
—
500
—
0.25
10
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
1.5
—
2.0
—
50
1.8
0.36
10
—
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/ W
°C/ W
MΩ
Feb.1999
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