TO-220FP 데이터 시트보기 (PDF) - Continental Device India Limited
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TO-220FP Datasheet PDF : 3 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR
CFD1933
TO-220FP Fully Isolated
Plastic Package
B CE
Low Freq. Power Amp.
Built in Damper Diode
Complementry CSB1342
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
80
Collector -Emitter Voltage
VCEO
80
Emitter Base Voltage
VEBO
7.0
Collector Current DC
IC
4.0
Collector Current (Pulse*)
6.0
Collector Power Dissipation @ Ta=25 deg C PC
2.0
Collector Power Dissipation @ Tc=25 deg C
30
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
*Single Pulse Pw=100ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
80
-
Collector Base Voltage
VCBO
IC=50uA, IE=0
80
-
Collector Cut off Current
ICBO
VCB=80V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=5V,IC=0
-
-
Collector Emitter Saturation Voltage
VCE(Sat)** IC=2A,IB=4mA
-
-
DC Current Gain
hFE**
IC=2A, VCE=3V
1.0
-
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=0.2A,
-
40
f=10MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
35
f=1MHz
**Pulse test
MAX
-
-
100
3.0
1.5
10
-
-
UNIT
V
V
V
A
A
W
W
deg C
deg C
UNIT
V
V
uA
mA
V
K
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 2
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