TP5335K1 데이터 시트보기 (PDF) - Supertex Inc
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TP5335K1 Datasheet PDF : 3 Pages
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TP5335
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
► High input impedance and high gain
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► Free from secondary breakdown
► Complementary N- and P-channel devices
Applications
► Logic level interfaces - ideal for TTL and CMOS
► Solid state relays
► Analog switches
► Power management
► Telecom switches
General Description
The Supertex TP5335 is a low threshold enhancement-
mode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
BVDSs/
BVDGs
RDS(ON)
(max)
VGS(TH)
(max)
Package Options
TO-236AB
-350V 30Ω -2.4V TP5335K1 TP5335K1-G
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
Drain
Gate
Source
TO-236AB
(Top View)
Absolute Maximum Ratings
Product Marking Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Value
BVDSS
BVDGS
±20V
Product marking for SOT-23:
P3S
where = 2-week alpha date code
Underline indicates Pb-Free (”Green”)
Operating and storage
temperature
-55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
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