UPD16855C 데이터 시트보기 (PDF) - NEC => Renesas Technology

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UPD16855C

DUAL HIGH-SIDE SWITCH FOR USB APPLICATION

NEC => Renesas Technology 

µPD16855

ELECTRICAL CHARACTERISTICS

DC CHARACTERISTICS (Unless otherwise specified, VIN = +5V; TA = +25°C)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Circuit Current

(only µPD16855A/C)

IDD

VCTL = 0V (both 1 pin & 4 pin),

OUT = open

1

5

µA

VCTL = VIN, OUT = open

1

1.5

mA

Circuit Current

(only µPD16855B/D)

IDD

VCTL = VIN (both 1 pin & 4 pin),

OUT = open

1

5

µA

VCTL = 0V, OUT = open

1

1.5

mA

Low-level Input Voltage

VIL

CTL Pin

1.0

V

High-level Input Voltage

VIH

CTL Pin

2.0

V

Input Current of CTL pin

ICTL

VCTL = 0V

0.01

1

µA

VCTL = VIN

0.01

1

µA

Output MOSFET On Resistance

RON

TA = 0 to +70 °C,

IOUT = 500 mA

DIP

SOP

100

140

mΩ

100

130

Output Leak Current

IO LEAK

10

µA

Over Current Detect Threshold

ITH

TA = 0 to +70 °C

0.6

0.9

1.25

A

Flag Output Resistance

RON F

IL = 10 mA

10

25

Ω

Flag Leak Current

IO LEAK F

VFLAG = 5 V

0.01

1

µA

Operating Voltage of

Under Voltage Locked Out

Circuit

VUVLO

VIN : Up

VIN : Down

Hysteresis

3.2

3.5

3.7

V

3.0

3.3

3.5

V

0.1

0.2

0.3

V

AC CHARACTERISTICS (Unless otherwise specified, VIN = +5 V; TA = +25 °C)

Parameter

Output Transition

Rising Time

Output Transition

Falling Time

Over Current Detect

Delay Time

CTL Input Low-Level Time

(only µPD16855A/C)

CTL Input High-Level Time

(only µPD16855B/D)

Symbol

tRISE

Conditions

RL = 10 Ω each output

tFALL

RL = 10 Ω each output

tOVER

tCTL

CTL : H→L→H

tCTL

CTL : L→H→L

Min

Typ

Max

Unit

2.5

12

ms

10

µs

5

20

µs

20

µs

20

µs

Data Sheet S13020EJ1V0DS00

7

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