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US1A-M3(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors

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상세내역
제조사
US1A-M3
(Rev.:2011)
Vishay
Vishay Semiconductors Vishay
US1A-M3 Datasheet PDF : 5 Pages
1 2 3 4 5
US1A thru US1M
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL US1A US1B US1D
Maximum instantaneous
forward voltage
1.0 A
VF (1)
1.0
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
IR
TA = 100 °C
Maximum reverse recovery
time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
Typical junction capacitance 4.0 V, 1 MHz
CJ
15
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
US1G
10
50
US1J
US1K
1.7
75
10
US1M UNIT
V
μA
ns
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL US1A US1B US1D
Maximum thermal resistance
RJA (1)
RJL (1)
Note
(1) PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area
US1G
75
27
US1J
US1K
US1M UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
US1J-M3/61T
0.064
61T
US1J-M3/5AT
0.064
5AT
BASE QUANTITY
DELIVERY MODE
1800
7" diameter plastic tape and reel
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERSITICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2" x 0.2" (5.0 mm x 5.0 mm)
0.2
Copper Pad Areas
0
0
25
50
75
100 125 150
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
30
TL = 110 °C
25
8.3 ms Single Half Sine-Wave
20
15
10
5
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89274
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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