ASI10711 데이터 시트보기 (PDF) - Advanced Semiconductor
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ASI10711 Datasheet PDF : 1 Pages
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VHB1-12T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-12T is Designed for
Class C, 12.5 V High Band Applications
up to 175 MHz.
FEATURES:
• Class C Operation
• PG = 10 dB at 1.0 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
400 mA (MAX)
VCBO
40 V
VCEO
20 V
VCER
40 V
VEBO
2.0 V
PDISS
3.5 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
20 °C/W
PACKAGE STYLE TO-39
B
ØA
C
45°
ØD
E
F
G
H
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.200 / 5.080
B
.029 / 0.740
.045 / 1.140
C
.028 / 0.720
.034 / 0.860
D
.335 / 8.510
.370 / 9.370
E
.305 / 7.750
.335 / 8.500
F
.240 / 6.100
.260 / 6.600
G
.500 / 12.700
H
.016 / 0.407
.020 / 0.508
ORDER CODE: ASI10711
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCER
IC = 5.0 mA
RBE = 10 Ω
BVEBO
IE = 100 µA
ICEO
VCE = 12 V
hFE
VCE = 5.0 V
IC = 100 mA
VCE(SAT)
IC = 100 mA
IB = 20 mA
MINIMUM TYPICAL MAXIMUM
20
40
2.0
0.2
10
200
0.5
UNITS
V
V
V
mA
---
Vdc
COB
VCB = 12.5 V
f = 1.0 MHz
4.0
pF
PG
VCE = 12.5 V
POUT = 1.0 W
f = 175 MHz
10
ηC
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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