IRF5806 데이터 시트보기 (PDF) - International Rectifier

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IRF5806

HEXFET® Power MOSFET

International Rectifier 

IRF5806

0.8

0.7

0.6

ID = -250µA

0.5

0.4

0.3

0.2

-75 -50 -25 0

25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 15. Typical Vgs(th) Vs.

Junction Temperature

100

80

60

40

20

0

0.0001

0.0010

0.0100 0.1000

Time (sec)

1.0000 10.0000

Fig 16. Typical Power Vs. Time

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