OPI120XV 데이터 시트보기 (PDF) - Optek Technology
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OPI120XV Datasheet PDF : 2 Pages
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Types OPI120TX, OPI120TXV
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode
VF
Forward Voltage(5)
1.00 1.40 1.70
1.20 1.60 1.90
0.90 1.15 1.50
V IF = 30 mA
V IF = 30 mA, TA = -55o C
V IF = 30 mA, TA = 100o C
IR
Reverse Current
0.1 10 µA VR = 2 V
Output Phototransistor
V(BR)CBO Collector-Base Breakdown Voltage
30 40
V IC = 100 µA, IE = 0, IF = 0
V(BR)CEO Collector-Emitter Breakdown Voltage
30 40
V IC = 100 µA, IB = 0, IF = 0
V(BR)EBO Emitter-Base Breakdown Voltage
5.0
V IE = 100 µA, IC = 0, IF = 0
IC(OFF) Collector-Emitter Dark Current
0.2 100
10 100
nA VCE = 10 V, IB = 0, IF = 0,
µA VCE = 10 V, IB = 0, IF = 0, TA = 100o C
ICB(OFF)
Coupled
IC(ON)
Collector-Base Dark Current
On-State Collector Current(5)
0.1 10.0 nA VCB = 10 V, IE = 0, IF = 0
2.0
mA VCE = 5 V, IB = 0, IF = 10 mA
1.2
mA VCE = 5 V, IB = 0, IF = 10 mA, TA = -55o C
1.2
mA VCE = 5 V, IB = 0, IF = 10 mA, TA = 100o C
VCE(SAT) Collector-Emitter Saturation Voltage
0.25 0.30 V IC = 2 mA, IB = 0, IF = 20 mA
VISO Isolation Voltage (Input to Output)
15.0 30.0
kV See Note 1
tr
Output Rise Time
8.0 15.0 µs VCC = 10 V, IC = 2 mA, RL = 100 Ω
tf
Output Fall Time
8.0 15.0 µs VCC = 10 V, IC = 2 mA, RL = 100 Ω
(5) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change
in measurement results.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200
Fax (214) 323-2396
13-47
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