STPR120A(1998) 데이터 시트보기 (PDF) - STMicroelectronics

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STPR120A
(Rev.:1998)

HIGH EFFICIENCY FAST RECOVERY DIODE

STMicroelectronics 

STPR120A

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Tests Conditions

IR * Reverse leakage current

VF ** Forward voltage drop

Tests Conditions

Tj = 25°C

VR = VRRM

Tj = 125°C

Tj = 25°C

IF = 1 A

Tj = 150°C IF = 1 A

Pulse test : * tp = 5ms, δ < 2%

** tp = 380 µs, δ < 2%

Min. Typ. Max. Unit

3

µA

180 400

0.9

V

0.65 0.71

RECOVERY CHARACTERISTICS

Symbol

trr

Tj = 25°C

tFR

Tj = 25°C

VFP Tj = 25°C

Tests Conditions

IF = 0.50 A

IR = 1 A

Irr = 0.25 A

IF = 1 A

VR = VRRM

dIF/dt = 50 A/µs

IF = 1 A dIF/dt = 100 A/µs

Measured at 1 V

IF = 1 A dIF/dt = 100 A/µs

Min. Typ. Max. Unit

25

ns

25 35

25

5

V

To evaluate the maximum conduction losses use the following equation :

P = 0.58 x IF(AV) + 0.118 x IF2(RMS)

2/5

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