STTH20003TV(2018) 데이터 시트보기 (PDF) - STMicroelectronics
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STTH20003TV Datasheet PDF : 10 Pages
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STTH20003
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values, per diode at Tamb = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
Repetitive peak reverse voltage
Forward rms current
IF(AV) Average forward current, δ = 0.5, square wave
IFSM
Tstg
Tj
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
TC = 110 °C
TC = 90 °C
tp = 10 ms sinusoidal
300
V
180
A
100
A
200
1000
A
-55 to +150 °C
150
°C
Symbol
Rth(j-c)
Rth(c)
Table 2. Thermal resistance parameters
Parameter
Junction to case
Coupling
Per diode
Total
Max. value
0.55
0.35
0.1
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 3. Static electrical characteristics (per diode)
Symbol
IR (1)
Parameter
Reverse leakage current
VF (2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = 300 V
Tj = 25 °C
Tj = 150 °C
IF = 100 A
Min. Typ. Max. Unit
-
200
µA
-
0.2
2
mA
-
1.20
V
-
0.80 0.95
To evaluate the maximum conduction losses, use the following equation:
P = 0.75 x IF(AV) + 0.0020 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
DS1796 - Rev 3
page 2/10
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