HI-222 데이터 시트보기 (PDF) - Intersil
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HI-222 Datasheet PDF : 9 Pages
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HI-222
Electrical Specifications ±VS = ±15V, VAH = 2.0V, VAL = 0.8V, Unless Otherwise Specified (Continued)
PARAMETER
TEMP (oC)
HI-222-5
MIN
TYP
MAX
UNITS
Gain Tolerance At 1MHz (Note 6)
25
-
0.05
-
dB
At 8MHz
25
-
0.15
-
dB
Bandwidth (Note 6)
25
-
200
-
MHz
CS(OFF), Switch Input Capacitance
CD(OFF), Switch Output Capacitance
CD(ON), Switch Output Capacitance
CA(ON), Switch Output Capacitance
CDS(OFF), Drain-to-Source Capacitance
POWER REQUIREMENTS
25
-
12
-
pF
25
-
28
-
pF
25
-
83
-
pF
25
-
5
-
pF
25
-
0.2
-
pF
1± at ±15V Quiescent Current
25
-
2.5
4.0
mA
Full
-
-
6.0
mA
PD, Quiescent Power Dissipation
25
-
75
120
mW
Full
-
-
180
mW
NOTES:
2. As with all semiconductors, stresses listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting
in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. The conditions listed under “Electrical Specifications” are the only conditions recommended for satisfactory operation.
3. VOUT = ±5V, IOUT - 7.5mA.
4. VIN = +5V, RL = 2kΩ, CL = 40pF. VA levels are 0.0V to 3.0V for switch under test. Switch not under test has VA = 4.0V.
5. VIN = 300mVP-P, RL = 50Ω, VAH = +2.0V, VAL = 0.8, f = 10MHz.
6. VIN = 300mVP-P, VOFFSET = 1.0, f = 3.58MHz and 4.43MHz, VAL = 0.V, RL = 2kΩ.
7. VIN = 300mVP-P RL = 50Ω, VAL = 0.8V.
Test Circuits
SWITCH INPUT
VIN = +5
LOGIC
INPUT
V+ = +15V
2
VA 12
4
14
3
11
VOUT
RL
CL
2K
35pF
VO
=
VIN
----------R----L-----------
RL + rON
CLIncludes CFIXTURE + CPROBE
GND
V- = -15V
FIGURE 1. SWITCHING TEST CIRCUIT (tON, tOFF1)
3
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