NES1821B-30 데이터 시트보기 (PDF) - NEC => Renesas Technology
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NES1821B-30 Datasheet PDF : 8 Pages
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NES1821B-30
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power
Linear Gain
Drain Current
SYMBOL
IDSS
VP
Rth
PO *1
GL
ID *2
MIN.
--
-4.0
--
44.5
11.0
--
TYP.
18.0
-2.6
1.4
45.0
13.0
2.5
MAX.
--
--
1.7
--
--
--
UNIT
A
V
°C/W
dBm
dB
A
TEST CONDITIONS
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, IDS = 80 mA
Channel to Case
freq. = 1.96 GHz
VDS = 10 V
IDS = 1.0 A set
Rg = 30 W *3
*1 PIN = 35.5 dBm
*2 PO = 37 dBm
RECOMMENDING OPERATING LIMITS
Rg *3
(W)
30
VDS
(V)
to 10
Tch
(°C)
to 125
G.C.P
*4
to 3 dB comp
Note
*3 Rg is the series resistance between the gate supply and the FET gate.
*4 G.C.P: Gain Compression Point
2
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