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P4C1256 데이터 시트보기 (PDF) - Semiconductor Corporation

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P4C1256
PYRAMID
Semiconductor Corporation PYRAMID
P4C1256 Datasheet PDF : 17 Pages
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P4C1256
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V = 5V ± 10%, All Temperature Ranges)(2)
CC
Sym.
Parameter
-12
-15
-20
-25
-35
-45
-55
-70 Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tRC Read Cycle Time 12
15
20
25
35
45
55
70
ns
tAA Address Access
12
15
20
25
35
45
55
70 ns
Time
t
AC
Chip Enable
Access Time
12
15
20
25
35
45
55
70 ns
tOH Output Hold from 2
2
2
3
3
3
3
3
ns
Address Change
tLZ Chip Enable to
2
2
2
3
3
3
3
3
ns
Output in Low Z
t
HZ
Chip Disable to
5
8
Output in High Z
9
11
15
20
25
30 ns
tOE Output Enable
Low to Data
Valid
5
7
9
10
15
20
25
30 ns
tOLZ Output Enable
0
0
0
0
0
0
0
0
ns
Low to Low Z
tOHZ Output Enable
High to High Z
5
7
9
11
15
20
25
30 ns
tPU Chip Enable to
Power Up Time
t
Chip Disable to
PD
Power Down
Time
0
0
0
0
0
0
0
0
ns
12
15
20
20
20
25
30
35 ns
Document # SRAM119 REV G
Page 4 of 17

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