FDS3912 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS3912 Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 50 V, ID= 3 A
IAR
Drain-Source Avalanche Current
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 80 V,
VGS = 20 V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V,
ID = 3 A
VGS = 6 V,
ID = 2.8 A
VGS = 10 V, ID = 3 A, TJ = 125°C
VGS = 10 V,
VDS = 10 V
VDS = 10V,
ID = 3 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 50 V,
f = 1.0 MHz
V GS = 0 V,
Crss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 50 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 50 V,
VGS = 10 V
ID = 3 A,
Min Typ Max Units
90
mJ
3.0
A
100
V
108
mV/°C
10
µA
100 nA
–100 nA
2
2.5
4
V
–6
mV/°C
92 125 mΩ
98 135
175 250
10
A
11
S
632
pF
40
pF
20
pF
8.5 17
ns
2
4
ns
23 37
ns
4.5
9
ns
14 20
nC
2.4
nC
3.8
nC
FDS3912 Rev C2(W)
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