FDS3912 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS3912 Datasheet PDF : 6 Pages
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Typical Characteristics
10
ID = 3A
8
VDS = 40V
60V
80V
6
4
2
0
0
2
4
6
8
10
12
14
16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
1
0.1
0.01
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
100µs
1ms
10ms
100ms
10s
1s
DC
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
800
700
600
500
400
300
200
100
CRSS
0
0
f = 1MHz
CISS
VGS = 0 V
COSS
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 135°C/W
30
TA = 25°C
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3912 Rev C2(W)
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