MR2000 데이터 시트보기 (PDF) - Shindengen

부품명

상세내역

제조사

MR2000

Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT

Shindengen 

Bipolar transistor

High-speed IGBT





MOSFET

100V

200V

300V

AC input voltage Vin [V]

Fig.4 Comparison of Losses in 900V Resistant Switching Device

3-2

Advantages of 900V Resistance in the High-speed IGBT (MR2900 Series)

The MR2900 Series incorporates a 900V resistant high-speed IGBT for almost ideal partial

resonance operation.

Fig.5 shows a comparison between waveforms with 650V and 900V resistance. The use of the

900V resistant device allows a sufficiently small resonance condenser discharge current, with

consequently reduced switching losses. This in turn allows an increase in the capacity of the

resonance condenser C1, thus allowing lower noise and a power supply of higher efficiency.

The ability to maintain a sufficient margin of voltages resistance eliminates the need for a DCR

snubber circuit, thus reducing the number of components required and allowing design of power

supplies with superior cost-performance.

Voltage [V]

800

700

900V design

600

650V design

500

400

300

Small switching loss

200

100

0

Current [A] 6

5

4

3

2

1

0

/

.

Fig.5 Comparison between Waveforms with 650V and 900V Resistance

Password Vol.02-06-e MR2000 Series

P.04

All Rights Reserved Copyright (C) SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. 2002

Share Link: