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ER1600FCT

16A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER

Won-Top Electronics 

®

WON-TOP ELECTRONICS

ER1600FCT – ER1606FCT

16A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER

Pb

Features

 Glass Passivated Die Construction

B

 Superfast 35nS and 50nS Recovery Time

 Low Forward Voltage Drop

 Low Reverse Leakage Current

 High Surge Current Capability

 Epoxy Meets UL 94V-0 Classification

 Ideally Suited for Use in High Frequency

C

G

A

PIN1 2 3

SMPS, Inverters and As Free Wheeling Diodes D

Mechanical Data

 Case: ITO-220, Full Molded Plastic

 Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

 Polarity: See Diagram

 Weight: 1.9 grams (approx.)

 Mounting Position: Any

 Mounting Torque: 0.6 N.m Max.

 Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

F

E

P

I

H

L

J

K

ITO-220

Dim

Min

Max

A

14.60 15.40

B

9.70

10.30

C

2.55

2.85

D

—

4.16

E

13.00 13.80

F

0.50

0.75

G

3.00 Ø 3.50 Ø

H

6.30

6.90

I

4.20

4.80

J

2.50

2.90

K

0.50

0.75

L

2.60

3.30

P

2.29

2.79

All Dimensions in mm

PIN 1

PIN 3

PIN 2

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Symbol

VRRM

VRWM

VR

VR(RMS)

ER

ER

ER

ER

ER

ER

ER

Unit

1600FCT 1601FCT 1601AFCT 1602FCT 1603FCT 1604FCT 1606FCT

50

100 150 200 300 400 600

V

35

70

105 140 210 280 420

V

Average Rectified Output Current Total Device

@TC = 100°C

Per Diode

IO

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

IFSM

on Rated Load (JEDEC Method)

Forward Voltage per diode

@IF = 8.0A

VFM

Peak Reverse Current

At Rated DC Blocking Voltage

@TC = 25°C

@TC = 100°C

IRM

Reverse Recovery Time (Note 1)

trr

16

8.0

200

0.95

10

500

35

A

1.3

50

A

1.7

V

µA

nS

Typical Junction Capacitance (Note 2)

CJ

85

60

pF

Thermal Resistance Junction to Ambient per diode

Thermal Resistance Junction to Case per diode

RθJA

RθJC

62

4.5

°C/W

RMS Isolation Voltage, t = 1 min

VISO

1500

V

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

© Won-Top Electronics Co., Ltd.

Revision: September, 2012

www.wontop.com

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