IXFC80N10 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFC80N10 Datasheet PDF : 2 Pages
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IXFC 80N10
Symbol
gfs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = IT Notes 1, 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS,
ID = 0.5 ID25, RG = 2.5 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Notes 2
35 55
S
4800
pF
1675
pF
590
pF
50
ns
75
ns
95
ns
31
ns
180
nC
42
nC
75
nC
0.54 K/W
0.3
K/W
ISOPLUS220 OUTLINE
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Note 1
trr
QRM
IF = 25A
-di/dt = 100 A/µs,
IRM
VR = 50 V
80 A
320 A
1.5 V
200 ns
0.5
µC
6
A
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT = 40A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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