HA-2520/883
Die Characteristics
DIE DIMENSIONS:
67 x 57 x 19 mils ± 1 mils
1700 x 1440 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
Metallization Mask Layout
WORST CASE CURRENT DENSITY:
0.26 x 105 A/cm2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
HA-2520/883: 40
PROCESS:
Bipolar Dielectric Isolation
COMP
V+ OUT
BAL
BAL
-IN
+IN
V-
5