P4C1256 데이터 시트보기 (PDF) - Performance Semiconductor
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P4C1256 Datasheet PDF : 8 Pages
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P4C1256
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym.
Parameter
-12
-15
-20
-25
-35
-45
-55
-70 Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC Write Cycle Time 12
15
20
25
35
45
55
70
ns
tCW Chip Enable
9
10
15
18
22
30
35
40
ns
Time to End of
Write
tAW Address Valid to 9
10
15
20
25
35
40
45
ns
End of Write
tAS Address Set-up 0
Time
tWP Write Pulse
9
Width
tAH Address Hold
0
Time
tDW Data Valid to
8
End of Write
0
0
11
15
0
0
9
11
0
0
0
18
22
25
0
0
0
13
15
20
0
0
ns
30
35
ns
0
0
ns
25
30
ns
tDH Date Hold Time 0
0
0
0
0
0
0
0
ns
tWZ Write Enable to
7
8
10
11
15
18
25
30 ns
Output in High Z
t
Output Active
3
3
3
3
5
5
0
0
ns
OW
from End of Write
WRITE CYCLE NO. 1 (WE CONTROLLED)(6)
ADDRESS
CE
tCW
(9)
tWC
WE
DATA IN
(7)
DATA OUT
tAW
tWP
tAH
tAS
DATA UNDEFINED
tWZ(4)
tDW
DATA VALID
tDH
tOW (4,7)
HIGH IMPEDANCE
Notes:
6.
CE
1
and
WE
must
be
LOW
for
WRITE
cycle.
7. OE is LOW for this WRITE cycle to show tWZ and tOW.
8.
If
CE
1
goes
HIGH
simultaneously
with
WE
HIGH,
the
output
remains
in a high impedance state.
9. Write Cycle Time is measured from the last valid address to the first
transitioning address.
121
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