BCX18LT1 데이터 시트보기 (PDF) - ON Semiconductor

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BCX18LT1

General Purpose Transistors

ON Semiconductor 

PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

Vdc

BCX17, 19

45

—

—

BCX18, 20

25

—

—

Collector–Emitter Breakdown Voltage

(IC = 10 µAdc, IC = 0)

V(BR)CES

Vdc

BCX17, 19

50

—

—

BCX18, 20

30

—

—

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 150°C)

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

ICBO

—

—

IEBO

—

—

100

nAdc

—

5.0

µAdc

—

10

µAdc

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 300 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

hFE

100

70

40

VCE(sat)

—

—

—

600

—

—

—

—

—

0.62

Vdc

Base–Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

—

—

1.2

Vdc

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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