PDM41256SA10TI 데이터 시트보기 (PDF) - Unspecified
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PDM41256SA10TI Datasheet PDF : 8 Pages
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PDM41256
Low VCC Data Retention Waveform
1
2
3
Data Retention Electrical Characteristics (LA Version Only)
Symbol Parameter
Test Conditions
4
Min. Typ. Max. Unit
VDR
ICCDR
VCC for Retention Data
Data Retention Current
CE ≥ VCC – 0.2V
VIN ≥ VCC – 0.2V
or ≤ 0.2V
2
VCC = 2V
—
—
—
V
95
500 µA
5
VCC = 3V
—
350 750 µA
tCDR
tR(4)
Chip Deselect to Data Retention Time
Operation Recovery Time
0
—
—
ns
tRC
—
6 —
ns
NOTES: (For three previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, tHZCE is less than tLZCE.
4. This parameter is sampled.
7
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage
6. Vcc = 5V ± 5%.
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Rev. 2.0 - 7/17/96
3-39
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