D1006UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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D1006UK
Semelab - > TT Electronics plc
D1006UK Datasheet PDF : 4 Pages
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TetraFET
D1006UK
MECHANICAL DATA
B
C
A
E
1
2
3
FG
6
5
4
J
D
H
M
QN
PIN 1
PIN 3
PIN 5
SOURCE
SOURCE
GATE
DIM mm
A
9.09
B
19.3
C
45°
D
5.71
E 1.65R
F
9.78
G 20.32
H 19.30
J 1.52R
K 10.77
M 22.86
N
3.17
O
0.13
P
4.19
Q
6.35
K
OP
DV
PIN 2
PIN 4
PIN 6
DRAIN
SOURCE
SOURCE
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.02
0.13
REF
Inches
0.358
0.760
45°
0.225
0.065R
0.385
0.800
0.760
0.060R
0.424
0.900
0.125
0.005
0.165
0.250
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.001
0.005
REF
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
120W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 14 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
220W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
30A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00
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